Recent Advances and Future Trends on Atomic Engineering of III-V Semiconductor for Quantum Devices from Deep UV (200nm) up to THZ (300 microns)
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Professor Manijeh Razeghi
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Abstract
Recent Advances and Future Trends on Atomic Engineering of III-V Semiconductor for Quantum Devices from Deep UV (200nm) up to THZ (300 microns)
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Professor Manijeh Razeghi
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Abstract
Nature offers us different kinds of atoms, but it takes human intelligence to put them together in an elegant way in order to realize functional structures not found in nature. The so-called III-V semiconductors are made of atoms from columns III ( B, Al, Ga, In. Tl) and columns V( N, As, P, Sb,Bi) of the periodic table, and constitute a particularly rich variety of compounds with many useful optical and electronic properties. Guided by highly accurate simulations of the electronic structure, modern semiconductor optoelectronic devices are literally made atom by atom using advanced growth technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD). Recent breakthroughs have brought quantum engineering to an unprecedented level, creating light detectors and emitters over an extremely wide spectral range from 0.2 mm to 300 mm. Nitrogen serves as the best column V element for the short wavelength side of the electromagnetic spectrum, where we have demonstrated III-nitride light emitting diodes and photo detectors in the deep ultraviolet to visible wavelengths. In the infrared, III-V compounds using phosphorus ,arsenic and antimony from column V ,and indium, gallium, aluminum, ,and thallium from column III elements can create interband and intrsuband lasers and detectors based on quantum-dot (QD) or type-II superlattice (T2SL). These are fast becoming the choice of technology in crucial applications such as environmental monitoring and space exploration. Last but not the least, on the far-infrared end of the electromagnetic spectrum, also known as the terahertz (THz) region, III-V semiconductors offer a unique solution of generating THz waves in a compact device at room temperature. Continued effort is being devoted to all of the above mentioned areas with the intention to develop smart technologies that meet the current challenges in environment, health, security, and energy. This talk will highlight my contributions to the world of III-V semiconductor Nano scale optoelectronics. Devices from deep UV-to THz.
Biography of the Speaker
Manijeh Razeghi received the Doctorat d'État es Sciences Physiques from the Université de Paris, France, in 1980.
After heading the Exploratory Materials Lab at Thomson-CSF (France), she joined Northwestern University, Evanston, IL, as a Walter P. Murphy Professor and Director of the Center for Quantum Devices in Fall 1991, where she created the undergraduate and graduate program in solid-state engineering. She is one of the leading scientists in the field of semiconductor science and technology, pioneering in the development and implementation of major modern epitaxial techniques such as MOCVD, VPE, gas MBE, and MOMBE for the growth of entire compositional ranges of III-V compound semiconductors. She is on the editorial board of many journals such as Journal of Nanotechnology, and Journal of Nanoscience and Nanotechnology, an Associate Editor of Opto-Electronics Review. She is on the International Advisory Board for the Polish Committee of Science, and is an Adjunct Professor at the College of Optical Sciences of the University of Arizona, Tucson, AZ. She has authored or co-authored more than 1000 papers, more than 30 book chapters, and fifteen books, including the textbooks Technology of Quantum Devices (Springer Science+Business Media, Inc., New York, NY U.S.A. 2010) and Fundamentals of Solid State Engineering, 3rd Edition (Springer Science+Business Media, Inc., New York, NY U.S.A. 2009). Two of her books, MOCVD Challenge Vol. 1 (IOP Publishing Ltd., Bristol, U.K., 1989) and MOCVD Challenge Vol. 2 (IOP Publishing Ltd., Bristol, U.K., 1995), discuss some of her pioneering work in InP-GaInAsP and GaAs-GaInAsP based systems. The MOCVD Challenge, 2nd Edition (Taylor & Francis/CRC Press, 2010) represents the combined updated version of Volumes 1 and 2. She holds 50 U.S. patents and has given more than 1000 invited and plenary talks. Her current research interest is in nanoscale optoelectronic quantum devices.
Dr. Razeghi is a Fellow of MRS, IOP, IEEE, APS, SPIE, OSA, Fellow and Life Member of Society of Women Engineers (SWE), Fellow of the International Engineering Consortium (IEC), and a member of the Electrochemical Society, ACS, AAAS, and the French Academy of Sciences and Technology. She received the IBM Europe Science and Technology Prize in 1987, the Achievement Award from the SWE in 1995, the R.F. Bunshah Award in 2004, and many best paper awards.